Influence of D.c. Bias on Characteristic X‐ray Emission from Al2O3 Targets Bombarded with 30‐kev Ga+ Ions

J. C. Rao,M. Song,R. C. Che,M. Takeguchi,K. Furuya
DOI: https://doi.org/10.1002/sia.2397
2006-01-01
Surface and Interface Analysis
Abstract:The present paper presents the low‐energy characteristic X‐ray emission from monocrystalline Al2O3 insulator samples in an electric field during positive, low‐energy ion (30 keV Ga+ and 100 keV Xe+) bombardment. The electric field built up by the direct current (d.c.) bias was parallel to the surface of the samples. The results show that the characteristic O Kα and Al Kα X rays increased with increase in applied d.c. bias, and that the X‐ray yield from the lighter element was more sensitive to the d.c. bias than that from the heavier element. Copyright © 2006 John Wiley & Sons, Ltd.
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