Synthesis of thin Si whiskers (nanowires) using SiCl4

Yingjiu Zhang,Qi Zhang,Nanlin Wang,Yunjie Yan,Huihua Zhou,Jing Zhu
DOI: https://doi.org/10.1016/S0022-0248(01)01360-4
IF: 1.8
2001-01-01
Journal of Crystal Growth
Abstract:Si nanowires and some amorphous SiOx (1<x⩽2) nanowires have been fabricated at ambient pressure by using SiCl4 as Si source and Al2O3 as substrate. The smallest diameter of the Si nanowires is about 10nm, which therefore makes them the thinnest Si nanowires fabricated by using SiCl4 as Si source. Most of the crystalline Si nanowires are single crystals with an amorphous layer. The axes of the Si nanowires are parallel to or perpendicular to one of the {111} crystal planes. The parameters affecting the sizes of the Si nanowires are analyzed.
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