In-Situ Diagnosis of InAs Quantum Dots Fabricated by MBE Using RHEED

Li Meicheng,Wang Lu,Xiong Min,Liu Jingmin,Zhao Liancheng
DOI: https://doi.org/10.3969/j.issn.1671-4776.2008.08.009
2008-01-01
Abstract:The theoretical analysis and recent progress using reflection high-energy electron diffraction (RHEED) in diagnosis of self-assembled InAs quantum dots are presented. From RHEED for the applications which include the determination of the critical transition, quantum dot facet orientation and quantum dot strain distribution, the study on the dynamic process for qutume dot nucleation and growth and so on, it can be seen that the reflection high-energy electron diffraction is a rather simple but ideal equipment in the real time microstructure analysis tool of InAs quantum dots with the standard configuration used in MBE. Moreover, through further improvement of the equipment performance and employment of dynamic diffraction theory in RHEED, the ability of RHEED to characterize quantum dot structure will be promoted, and the fabrication and applications of better InAs quantum dots can be realized finally.
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