Abstract:InGaAs films with high In composition were prepared on InP(001)InAs(001)substrate by molecular beam epitaxy(MBE).During the process of growing InGaAs,the growth rate and status was measured and monitored through reflection high energy electron diffraction(RHEED)oscillations and patterns respectively.After grown and annealed,the samples were transferred into scanning tunneling microscope(STM)to analyze the morphology and surface reconstruction.The STM images confirmed that the surface of InGaAs films were atomically flat.It is found that the stretch stress between InGaAs and substrate should play key role to shape the jagged edges on InGaAs surface.In despite of the surface of InGaAs films with high In composition have the same RHEED patterns which showed their reconstruction were(2×3)or(4×3)/(2×3),but from the high resolution STM images,it is considered that surface was a mixture reconstruction,β(2×4)was majority surface reconstruction of In0.90 Ga0.10 As/InAs films while(4×3)was the mainly surface reconstruction of In0.53 Ga0.47 As/InP films.

MBE Growth and STM Analysis of Surface Morphology and Reconstructions of InAs Films

MBE Growth and STM Analysis of InGaAs Films with High In Composition

The MBE Growth Research on InGaAs/GaAs Heterofilms

The MBE Growth Research on Different Composition of in of InGaAs Films under the Real-Time Monitoring of RHEED

Growth of Nano-Structures on Composition-Modulated Inalas Surfaces

Morphology of Mbe Grown Inas Films Studied by Atomic Force Microscope

Correlation Study between RHEED Diffraction Patterns and Crystal Surface Morphology

Influence of GaAs(0 0 1) Pregrowth Surface Morphology and Reconstruction on the Growth of InGaAs Layers

Atomic Structures on a GaAs(001) Surface Grown by Molecular Beam Epitaxy

MBE growth and STM analysis of InGaAs quantum dots with As intermittent interruption

Influence Of Gaas(001) Pregrowth Surface Morphology And Reconstruction On The Growth Of Ingaas Layers

Research on the Surface Morphology of Al X Ga 1− X As in Molecular Beam Epitaxy

Indium-rich 4x2 reconstruction in novel growth of inas on the GaAs(001)

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

Dipole coupling induced magnetic ordering in an ensemble of nanostructured islands

Growth and study of InAs thin films for Hall effect devices

Analysis of Surface Morphology and Chemical Composition of InAs Single Crystal Substrate

The Research on Ostwald Ripen Process of GaAs (001) Films by MBE Growth

Metallized Transform of InAs(001) Surface

In-Rich 4x2 Reconstruction In Novel Planar Growth Of Inas On Gaas(001)

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots