Modulation on the magnetic and electrical properties of Fe3O4 thin films through strain relaxation
Qisong Sun,Chunfang Wu,Xinchi Fang,Dongmin Zhang,Minggang Zhu,Dewei Zhao,Congmian Zhen,Li Ma,Denglu Hou
DOI: https://doi.org/10.1016/j.jmmm.2021.168128
IF: 3.097
2021-10-01
Journal of Magnetism and Magnetic Materials
Abstract:A series of Fe3O4 thin films with growth temperature ranging from 400 to 600 °C are prepared by magnetron sputtering on α-Al2O3 (0001). XRD and XPS measurements indicate that all the samples are pure Fe3O4 (111) epitaxial thin films. Microscopic strain is highly sensitive to the growth temperature. As a result, the magnetic and electrical measurements show some interesting phenomena related to the strain relaxation. The saturation magnetization demonstrates a monotonous increase in relative change as large as 85.9% originating from the strain relaxation effect. The improvement of magnetic anisotropy in Fe3O4 thin films is attributed to the reduction of strain-induced anisotropy. However, the resistivity changes suddenly at the growth temperature of 450 °C, which is dominated by mesoscopic grain size rather than microscopic strain.
materials science, multidisciplinary,physics, condensed matter