Modulation on the magnetic and electrical properties of Fe3O4 thin films through strain relaxation

Qisong Sun,Chunfang Wu,Xinchi Fang,Dongmin Zhang,Minggang Zhu,Dewei Zhao,Congmian Zhen,Li Ma,Denglu Hou

DOI: https://doi.org/10.1016/j.jmmm.2021.168128

IF: 3.097

2021-10-01

Journal of Magnetism and Magnetic Materials

Abstract:A series of Fe3O4 thin films with growth temperature ranging from 400 to 600 °C are prepared by magnetron sputtering on α-Al2O3 (0001). XRD and XPS measurements indicate that all the samples are pure Fe3O4 (111) epitaxial thin films. Microscopic strain is highly sensitive to the growth temperature. As a result, the magnetic and electrical measurements show some interesting phenomena related to the strain relaxation. The saturation magnetization demonstrates a monotonous increase in relative change as large as 85.9% originating from the strain relaxation effect. The improvement of magnetic anisotropy in Fe3O4 thin films is attributed to the reduction of strain-induced anisotropy. However, the resistivity changes suddenly at the growth temperature of 450 °C, which is dominated by mesoscopic grain size rather than microscopic strain.

materials science, multidisciplinary,physics, condensed matter

What problem does this paper attempt to address?

The paper primarily explores how the magnetic and electrical properties of Fe3O4 films prepared at different growth temperatures are affected by the strain relaxation effect.

Researchers deposited a series of Fe3O4 films on α-Al2O3 substrates using magnetron sputtering, with growth temperatures ranging from 400°C to 600°C. Techniques such as X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirmed that all samples were pure phase Fe3O4 and exhibited [111] epitaxial characteristics. The microstrain was highly sensitive to the growth temperature, gradually releasing as the growth temperature increased. This change significantly affected the magnetic and electrical properties of the films.

Specifically, the saturation magnetization (Ms) showed a monotonous increasing trend, with a relative change of up to 85.9%, attributed to the release of strain. Additionally, the magnetic anisotropy of the Fe3O4 films also improved, which is believed to be due to the reduction of strain-induced anisotropy. However, a sudden change in resistivity occurred at 450°C, primarily dominated by the mesoscale grain size rather than the microstrain.

In summary, this study aims to reveal the mechanism of how growth temperature affects the magnetic and electrical properties of Fe3O4 films, particularly the role of strain relaxation in regulating these properties. This provides a theoretical basis for optimizing the growth conditions of Fe3O4 films and enhancing their application in spintronic devices.