Abstract:Utilization of the switchable spontaneous polarization of ferroelectric materials offers a promising avenue for the future of nanoelectronic memories and logic devices provided that nanoscale metal-ferroelectric-metal heterostructures can be engineered to maintain a bi-stable polarization switchable by an applied electric field. The most challenging aspect of this approach is to overcome the deleterious interface effects which tend to render ferroelectric polarization either unstable or unswitchable and which become ever more important as ferroelectric materials are produced thinner and thinner. Here we use first-principles density functional calculations and phenomenological modeling to demonstrate that a BaO/RuO2 interface termination sequence in SrRuO3/BaTiO3/SrRuO3 epitaxial heterostructures grown on SrTiO3 can lead to a nonswitchable polarization state for thin BaTiO3 films due to a fixed interface dipole. The unfavorable interface dipole at the BaO/RuO2 interface leads to a strong preference for one polarization state and, in thin film structures, leads to instability of the second state below a certain critical thickness, thereby making the polarization unswitchable. We analyze the contribution of this interface dipole to the energetic stability of these heterostructures. Furthermore, we propose and demonstrate that this unfavorable interface dipole effect can be alleviated by deposition of a thin layer of SrTiO3 at the BaO/RuO2 terminated interface. Our first-principles and phenomenological modeling predict that the associated change of the interface termination sequence to SrO/TiO2 on both sides of the heterostructure leads to a restoration of bi-stability with a smaller critical thickness, along with an enhancement of the barrier for polarization reversal. These results demonstrate that interface engineering is a viable approach to enhance ferroelectric properties at the nanoscale.

Interface-induced modulation of charge and polarization in thin film Fe(3)O(4).

Tuning Interfacial Magnetic Ordering Via Polarization Control in Ferroelectric SrTiO3/PbTiO3 Heterostructure.

Enhancement of Interfacial Polarization in BaTiO 3 Thin Films via Oxygen Inhomogeneity

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces.

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Interfacial-strain-induced Structural and Polarization Evolutions in Epitaxial Multiferroic BiFeO3 (001) Thin Films.

Strain-tunable Magnetism at Oxide Domain Walls

Improved Multiferroic in EuTiO3 Films by Interphase Strain Engineering

Optical Modulation of MoTe 2 /Ferroelectric Heterostructure via Interface Doping

Chemical control of polarization in thin strained films of a multiaxial ferroelectric: Phase diagrams and polarization rotation

Enhanced Ferroelectric Functionality in Flexible Lead Zirconate Titanate Films with In-Situ Substrate-Clamping Compensation

Tunability of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface by strain-induced ferroelectricity

Interface Dipole Effect on Thin Film Ferroelectric Stability: First-Principles and Phenomenological Modeling

Emergent Ferromagnetism at LaFeO3/SrTiO3 Interface Arising from Strain-induced Spin-State Transition

Polarization-controlled Ohmic to Schottky Transition at a Metal/ferroelectric Interface

Giant Uniaxial Strain Ferroelectric Domain Tuning in Freestanding PbTiO3 Films

Polarization Controlled Ohmic to Schottky Transition at a Metal/Doped Ferroelectric Interface

Strain Coupling of Conversion‐type Fe3O4 Thin Films for Lithium Ion Batteries

Impact of Effective Shear Strain on the Equilibrium Phases and Polarization States of PbTiO3 Thin Film

Interplay between polarization, strain and defect-pairs in Fe-doped SrMnO$_{3-δ}$

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity