Abstract:The P+ ferroelectric state, pointing away from the sample requires negative charge accumulation close to the surface (a) while positive charges accumulate close to the surface of P− samples (b). For P+ samples, such off‐stoichiometry reveals in‐gap, oxygen vacancies‐related band (c), absent for P− samples (d). X‐ray photoelectron spectroscopy measurements reveal Ti/Zr vacancies at the P− surface. Pb(Zr,Ti)O3 (PZT) is the most common ferroelectric (FE) material widely used in solid‐state technology. Despite intense studies of PZT over decades, its intrinsic band structure, electron energy depending on 3D momentum k, is still unknown. Here, Pb(Zr0.2Ti0.8)O3 using soft‐X‐ray angle‐resolved photoelectron spectroscopy (ARPES) is explored. The enhanced photoelectron escape depth in this photon energy range allows sharp intrinsic definition of the out‐of‐plane momentum k and thereby of the full 3D band structure. Furthermore, the problem of sample charging due to the inherently insulating nature of PZT is solved by using thin‐film PZT samples, where a thickness‐induced self‐doping results in their heavy doping. For the first time, the soft‐X‐ray ARPES experiments deliver the intrinsic 3D band structure of PZT as well as the FE‐polarization dependent electrostatic potential profile across the PZT film deposited on SrTiO3 and LaxSrMn1−xO3 substrates. The negative charges near the surface, required to stabilize the FE state pointing away from the sample (P+), are identified as oxygen vacancies creating localized in‐gap states below the Fermi energy. For the opposite polarization state (P−), the positive charges near the surface are identified as cation vacancies resulting from non‐ideal stoichiometry of the PZT film as deduced from quantitative XPS measurements.

Study of Asymmetric Charge Writing on Pb(Zr,Ti)O3 Thin Films by Kelvin Probe Force Microscopy

Scanning force microscopy investigation of the Pb(Zr0.25Ti0.75)O3/Pt interface

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Charge writing at the LaAlO3/SrTiO3 surface

Surface charge dynamics on air-exposed ferroelectric Pb(Zr,Ti)O3(001) thin films

Direct Spectroscopic Evidence of Charge Reversal at the Pb(Zr0.2Ti0.8)O

Manipulating topological transformations of polar structures through real-time observation of the dynamic polarization evolution

Fabrication And Characterization Of In-Plane Polarized Pzt Films With Interdigital Electrodes

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Polarization loop deformations of an oxygen deficient Pb(Zr0.25,Ti0.75)O3 ferroelectric thin film

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Interface Control Of Surface Photochemical Reactivity In Ultrathin Epitaxial Ferroelectric Films

Polarization Control of Electron Tunneling into Ferroelectric Surfaces.

Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers

Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films.

Experimental Band Structure of Pb(Zr,Ti)O3: Mechanism of Ferroelectric Stabilization

Electric Properties of Pt/PbZr 0.53 Ti 0.47 O 3 /laalo 3 /si Structure

Separation of the Schottky Barrier and Polarization Effects on the Photocurrent of Pt Sandwiched Pb(Zr0.20ti0.80)O-3 Films

Ferroelectric Properties of Bilayer Structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) Thin Films on Pt/TiO2/SiO2/Si Substrates

The structural and electrical properties of Al/Pb(Zr0.52Ti 0.48)O3/Al2O3/Si with an Al 2O3 layer prepared by using the molecular atomic deposition method

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films