Abstract:It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO3/SrTiO3 or PbZr0.2Ti0.8O3/SrTiO3 heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO3/SrTiO3 heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO3/SrTiO3 heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO3/SrTiO3 heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti3+ and Ti4+ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO3. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.

Scanning force microscopy investigation of the Pb(Zr0.25Ti0.75)O3/Pt interface

Periodic Misfit Dislocation And Electron Aggregation At (010) Pbtio3/Srtio3 Heterointerface

Separation of the Schottky Barrier and Polarization Effects on the Photocurrent of Pt Sandwiched Pb(Zr0.20ti0.80)O-3 Films

High-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices

In-situ study on piezoelectric responses of sol-gel derived epitaxial Pb[Zr,Ti]O 3 thin films on Si substrate

Direct Spectroscopic Evidence of Charge Reversal at the Pb(Zr0.2Ti0.8)O

Effect of the orientation polarization and texturing on nano-mechanical and piezoelectric properties of PZT (52/48) films

In situ X-ray reflectivity study of imprint in ferroelectric thin films

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Electric Properties of Pt/PbZr 0.53 Ti 0.47 O 3 /laalo 3 /si Structure

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Interface Control Of Surface Photochemical Reactivity In Ultrathin Epitaxial Ferroelectric Films

Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers

Experimental Band Structure of Pb(Zr,Ti)O3: Mechanism of Ferroelectric Stabilization

Polarization loop deformations of an oxygen deficient Pb(Zr0.25,Ti0.75)O3 ferroelectric thin film

The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films

Enhancement of the piezoelectric property in PMN-PZT/PZT thin films

<i>In Situ</i> X-Ray Reflectivity Study of Imprint in Ferroelectric Thin Films

Pulsed Excimer Laser Deposition of Pb(Zr,Ti)O3thin Films on Simox Substrates