Abstract:By using sol-gel spin coating method nanostructured Pb(Zr0.53Ti0.47)O3(PZT) ferroelectric thin films were fabricated on the Si substrates coated by nanoporous alumina membranes with average pore sizes of 20-100nm,in which metal(Au or Pt)nanowires were embedded as a part of the bottom electrode.The dielectric,ferroelectric properties and microstructure of the nanostructured PZT thin films were characterized.The dielectric measurements demonstrated that the dielectric constant of the PZT nanofilms with a thickness of 25nm decreased quickly from 860 to 100 as increasing the frequency below 104 Hz,and then remained almost constant of 100 as further increasing the frequency up to 106 Hz.Such a fast decrease of the dielectric constant in the low frequency region was resulted from the dielectric relaxation of space charges accumulated at the interfaces between the nanofilm and the(bottom and top)metal electrodes.The dielectric loss peak observed near 4000Hz was contributed from the resonant absorption effect of the space charges.The polarization-electric field hystere-sis loops of the nanostructured PZT films with a thickness 100nm showed that the remanent polarization of the PZT nanofilm was 50μC/cm2 and coercive field of 500kV/cm.Cross-sectional TEM images showed that the nanostructured PZT films contacted directly with the bottom electrode(metal nanowires),and the interface between them exhibited some degree of waviness.It was found that some Au nanowires became into branches at their ends after post-annealing the PZT nanofilms,whereas such a phenomenon was effectively prohibited by using Pt nanowires.A selection of proper post-annealing temperature was the critical processing parameter for fabricating nanostructured PZT ferroelectric thin films as making a trade-off between the ordered metal nanowires within the nanoporous alumina membranes and the crystallinity of ferroelectric nanofilms.

In situ X-ray reflectivity study of imprint in ferroelectric thin films

<i>In Situ</i> X-Ray Reflectivity Study of Imprint in Ferroelectric Thin Films

Imprint effect in PZT thin films at compositions around the morphotropic phase boundary

Scanning force microscopy investigation of the Pb(Zr0.25Ti0.75)O3/Pt interface

Pulsed Excimer Laser Deposition of Pb(Zr,Ti)O3thin Films on Simox Substrates

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Influence of Nano-Embossing on Properties of Pb(Zr-0.3,Ti-0.7)O-3 Ferroelectric Thin Film

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

High-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Fabrication of Nanostructured PZT Ferroelectric Thin Films and Their Characterization

Fabrication And Characterization Of In-Plane Polarized Pzt Films With Interdigital Electrodes

Incommensurately Modulated Structures in Zr-rich PZT: Periodic Nanodomains, Reciprocal Configuration, and Nucleation

In-situ study on piezoelectric responses of sol-gel derived epitaxial Pb[Zr,Ti]O 3 thin films on Si substrate

Characterizations Of Nanoembossed Pb(Zr-0.3, Ti-0.7)O-3 Ferroelectric Films

Interface modifications of lead zirconate titanate thin films

Preparation of Pb(Zr0.52Ti0.48)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Interface Control Of Surface Photochemical Reactivity In Ultrathin Epitaxial Ferroelectric Films

Use of Nanomechanical Fracture-Testing for Determining the Interfacial Adhesion of PZT Ferroelectric Thin Films

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Preparation of Pb(Zr0.52Ti484848)O3 Thin Films on Silicon-on-insulator Substrates by Excimer Laser Deposition Combined with Rapid Thermal Annealing