Abstract:By using sol-gel spin coating method nanostructured Pb(Zr0.53Ti0.47)O3(PZT) ferroelectric thin films were fabricated on the Si substrates coated by nanoporous alumina membranes with average pore sizes of 20-100nm,in which metal(Au or Pt)nanowires were embedded as a part of the bottom electrode.The dielectric,ferroelectric properties and microstructure of the nanostructured PZT thin films were characterized.The dielectric measurements demonstrated that the dielectric constant of the PZT nanofilms with a thickness of 25nm decreased quickly from 860 to 100 as increasing the frequency below 104 Hz,and then remained almost constant of 100 as further increasing the frequency up to 106 Hz.Such a fast decrease of the dielectric constant in the low frequency region was resulted from the dielectric relaxation of space charges accumulated at the interfaces between the nanofilm and the(bottom and top)metal electrodes.The dielectric loss peak observed near 4000Hz was contributed from the resonant absorption effect of the space charges.The polarization-electric field hystere-sis loops of the nanostructured PZT films with a thickness 100nm showed that the remanent polarization of the PZT nanofilm was 50μC/cm2 and coercive field of 500kV/cm.Cross-sectional TEM images showed that the nanostructured PZT films contacted directly with the bottom electrode(metal nanowires),and the interface between them exhibited some degree of waviness.It was found that some Au nanowires became into branches at their ends after post-annealing the PZT nanofilms,whereas such a phenomenon was effectively prohibited by using Pt nanowires.A selection of proper post-annealing temperature was the critical processing parameter for fabricating nanostructured PZT ferroelectric thin films as making a trade-off between the ordered metal nanowires within the nanoporous alumina membranes and the crystallinity of ferroelectric nanofilms.

Influence of Nano-Embossing on Properties of Pb(Zr-0.3,Ti-0.7)O-3 Ferroelectric Thin Film

Characterizations Of Nanoembossed Pb(Zr-0.3, Ti-0.7)O-3 Ferroelectric Films

Nano-embossing Technology on Ferroelectric Thin Film Pb(Zr0.3,Ti0.7)O3 for Multi-Bit Storage Application.

Nanoscale control of domain arrangements in Pb(Zr0.3,Ti0.7)O3 ferroelectric films

Nanoembossing and Piezoelectricity of Ferroelectric Pb(Zr 0.3,ti 0.7)O 3 Nanowire Arrays

Influence of Nano-Embossing on Properties of Poly(vdf-Trfe)

Fabrication of Nanostructured PZT Ferroelectric Thin Films and Their Characterization

THE IMPRINT RATE OF Pb(Zr0.55,Ti0.45)O3 FERROELECTRIC THIN FILMS

Ferroelectric Nanostructures Fabricated by Dip-Coating Process and Microstructural Characterization by Scanning Transmission Electron Microscopy

Influence of different bottom electrodes to microstructure and electrical properties of Pb(Zr0.52Ti0.48)O3 ferroelectric films

Pattern Transfer of Nano-Scale Ferroelectric PZT Gratings by a Reversal Nanoimprint Lithography

Retraction of Nanoembossing Induced Ferroelectric Lithography on PZT Films for Silver Particle Patterning

Fabrication And Characterization Of In-Plane Polarized Pzt Films With Interdigital Electrodes

Fabrication and Piezoresponse of Electrospun Ultra-Fine Pb(Zr0.3, Ti0.7)O3 Nanofibers

The Preparation and Characterization of the PZT Thin Film with (100) Peak Preferred Orientation

Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

<i>In Situ</i> X-Ray Reflectivity Study of Imprint in Ferroelectric Thin Films

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Thickness dependence of PbZr0.52Ti0.48O3 thin film ferroelectric parameters

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films