Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Potassium-promoted Oxidation of Β-Sic

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Photoemission Study of the Initial Oxidation Of

Oxidation kinetics of SiC in microwave oxygen plasma

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Synchrotron radiation photoemission study of potassium-promoted oxidation of InP(100) surface

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

High Temperature Oxidation of Reaction-Bonded Silicon Carbide

High Temperature Oxidation Kinetics of Reaction-Bonded Silicon Carbide

An Investigation of the Properties of Silicon Oxide Prepared by Oxidation of Silicon in Chlorine-Containing Ambients at 850°C

The role of potassium in K/Co3O4 for soot combustion under loose contact

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Static and dynamic oxidation behaviour of silicon carbide at high temperature

Effect of Potassium on Sol-Gel Cerium and Lanthanum Oxide Catalysis for Soot Combustion

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Molecular Dynamics Simulation of High-Temperature Oxidation of 3 CSiC ( 100 ) : Differences Between Si-face and C-face

The Existing States of Potassium Species in K-Doped Co3o4 Catalysts and Their Influence on the Activities for No and Soot Oxidation

Oxidation Of Silicon Surface With Atomic Oxygen Radical Anions