Self-Consistent SchrÖdinger–Poisson Simulations on Capacitance–Voltage Characteristics of Silicon Nanowire Gate-All-Around MOS Devices With Experimental Comparisons

S. K. Chin,Valeri Ligatchev,Subhash C. Rustagi,Hui Zhao,Ganesh S. Samudra,Navab Singh,G. Q. Lo,Dim-Lee Kwong
DOI: https://doi.org/10.1109/TED.2009.2028402
IF: 3.1
2009-01-01
IEEE Transactions on Electron Devices
Abstract:We simulate room temperature capacitance-voltage characteristics of silicon (Si) nanowire gate-all-around MOS structures with radius les 10 nm using a self-consistent Schrodinger- Poisson solver in cylindrical coordinates with full treatment of the transverse quantum confinement. In this paper, we compare our simulation results with the latest capacitance measurements on single Si nanowire pMOS an...
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