Abstract:Wide band gap semiconductors, such as SiC, GaN, etc. can provide power electronic systems with increased power densities, high reliability in extreme environments and higher integration density, and have been receiving considerable attentions to replace Si power semiconductor devices. High power, high service temperature are the characteristics of these semiconductors, however, these make big challenges for the interconnections between the semiconductor die and the substrate. Novel interconnection materials without lead have been developing, including novel solder alloys, such as Au-Sn, Au-Ge, Bi-Ag, Zn-Al, etc. and metallic nanoparticles (NPs), such as Ag NPs, Cu NPs, etc. Corresponding interconnection methods can be divided into soldering, transient liquid phase (TLP) bonding and sintering. Indeed, materials research and development obviously is effective for solving the present challenges. Novel techniques are another important way for wide band gap semiconductors packaging. Thus, different from the traditional Sn-based soldering (commonly resulting in an interconnect possessing a low-melting temperature similar to the soldering temperature), this work reports a fabrication method of forming intermetallic compound (IMC) interconnect through ultrasonic-assisted soldering with traditional Sn-0.7wt.%Cu solder alloy. A (Cu,Ni)(6)Sn-5 ternary IMC joint was fabricated at 250 degrees C for 10s. The thermal conductivity of the IMC joint was 75.8W/(m.K), which was approximately 3 times higher than the joint obtained by traditional reflow [20W/(m.K)]. The IMC joint can be served at the temperature less than 332 degrees C (0.8 times of the melting point).

Joining CoSb3 to Metal Surface of FGM Electrode for Thermoelectric Modules by SPS

TiB2/Cu Electrode Material Fabricated Via SPS

Metallization and Diffusion Bonding of CoSb3-Based Thermoelectric Materials

Functionally Graded Electrode Materials for Thermoelectric Devices

Enhancing Interfacial Stability and Mechanical Strength of a CoSb3-Based Thermoelectric Junction Using Ti-Based Alloy Barrier Layers.

Interfacial Reactions at the Joints of Cosb3-Based Thermoelectric Devices

Diffusion bonding at the interface of Bi2Te3 thermoelectric modules

Research on the Thermal Stability of MoCu/CoSb3 Thermoelectric Junction with CoCrFeNi High-Entropy Alloy Barrier Layer

Interface Structure and Electrical Property of Yb0.3co4sb12/Mo-Cu Element Prepared by Welding Using Ag-Cu-Zn Solder

Achieving Reliable CoSb3 based thermoelectric joints with low contact resistivity using a high-entropy alloy diffusion barrier layer

Preparation of Functionally Graded Cu/AlN/Cu Electrode Materials for Thermoelectric Devices

Ultrasonic-assisted Soldering of Sn-based Solder Alloys to Form Intermetallic Interconnects for High Temperature Application

TiB<sub>2</sub>/AlN/Cu Functionally Graded Materials (fgms) Fabricated by Spark Plasma Sintering (SPS) Method

Reliable N-type Mg3.2Sb1.5Bi0.49Te0.01/304 stainless steel junction for thermoelectric applications

Realizing the Ultralow Lattice Thermal Conductivity of Cu3SbSe4 Compound via Sulfur Alloying Effect

Bonding Performance of Ag-Cu Brazing Solders and Half-Heusler Alloys for High-Performance Thermoelectric Generators.

Mechanical Alloying and Spark Plasma Sintering of Bicuseo Oxyselenide: Synthesis Process and Thermoelectric Properties

TiB<sub>2</sub>/AlN/Cu Functionally Graded Materials (FGMs) Fabricated by Spark Plasma Sintering (SPS) Method

Interfacial Design Contributing to High Conversion Efficiency in Mg3(Sb, Bi)2/Bi2Te3 Thermoelectric Module with Superior Stability

Developing Contacting Solutions for Mg2Si1- xSn x-Based Thermoelectric Generators: Cu and Ni45Cu55 as Potential Contacting Electrodes

Enhanced Interfacial Reliability and Mechanical Strength of CoSb3-Based Thermoelectric Joints with Rationally Designed Diffusion Barrier Materials of Ti-Based Alloys