Abstract:Bismuth telluride-based thermoelectric (TE) devices were widely used in waste heat recovery due to their high thermoelectric figure of merit (ZT), but the severe diffusion between Sn-based solder and TE pillar generated porous and brittle Sn-Te intermetallic compound (IMC), which seriously restricted the reliable service of devices. Ni-based coating was used but the thick Ni-Te IMC also impaired the properties of TE pillars. In this work, the crystalline Co-P coating was inserted between the p-type TE material Bi 0.5 Sb 1.5 Te 3 and the solder by electrodeposition, and the power generation sustainability of the TE pillar were significantly improved, and the mechanism was revealed. The microstructural characterization proved that the Co-P coating could effectively resist the diffusion of active Sn, Bi, Sb, Cu atoms. Co-P coating would provide support for the structural integrity and performance sustainability of TE pillars. It was worth noting that an ultrathin CoTe 2 IMC layer was formed between the Co-P coating and the Bi-Sb-Te pillar, which was much thinner than the Ni-Te IMC layer reported in the literature. This indicated that Co-P only consumed little thermoelectric elements, but also a good metallurgical bond was formed between the Co-P and the Bi-Sb-Te. After aging at 423 K for 150 h, the maximum output power and average Seebeck coefficient of the TE pillar without coating dropped significantly by 74% and 34%, respectively, and the internal resistance rose by 67%. Remarkably, the maximum output power and average Seebeck coefficient of the TE pillar protected by the Co-P coating only decreased by 14% and 5%, respectively, and the internal resistance only increased by 6%.

Diffusion bonding at the interface of Bi2Te3 thermoelectric modules

Effect of Plating Layers on the Bonding Strength of p-Type Bi-Te Thermoelectric Elements

Study on interface behavior of Be/CuCrZr alloy by diffusion bonding

Ni barrier in Bi2Te3-based thermoelectric modules for reduced contact resistance and enhanced power generation properties

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

Interfacial Stability in Bi2Te3 Thermoelectric Joints

Polarity Effect in a Sn3Ag0.5Cu/Bismuth Telluride Thermoelectric System

Ni–W–P layer-induced strength improvement of solder joint in Bi2Te3 thermoelectric module

Interfacial Reactions in the Sn-Bi/Te Couples

Evaluation of Electroplated Co-P Film as Diffusion Barrier Between In-48Sn Solder and SiC-Dispersed Bi 2 Te 3 Thermoelectric Material

EFFECT OF OPERATING TEMPERATURE ON INTERFACE DIFFUSION AND POWER GENERATION OF BISMUTH TELLURIDE THERMOELECTRIC MODULES

Bonding and Interfacial Reaction Between Ni Foil and N-Type Pbte Thermoelectric Materials for Thermoelectric Module Applications

Microstructural evolution and failure mechanism dominated by Bi, Sb cooperative diffusion at p-type thermoelectric pillar Bi-Sb-Te/Sn interface

Interfacial reactions between Ni and Bi 2 (Se 0.1 Te 0.9 ) 3 and its constituent material systems

Bonding and High-Temperature Reliability of NiFeMo Alloy/n-Type PbTe Joints for Thermoelectric Module Applications

Interfacial Reactions in Ni/Se-90 At.%te and Ni/Pb1-xSnxSe Couples

Interfacial Reactions in Thermoelectric Modules

Evidences for diffusion-induced phase evolution and crack generation of intermetallic at Bi 2 Te 3 /Sn interface of thermoelectric generator electrode

Atomic-Resolution Interfacial Reaction Mechanism between Bi 2 Te 3 -Based Alloys and Ni Electrodes

Evaluation of Solidification and Interfacial Reaction of Sn-Bi and Sn-Bi-In Solder Alloys in Copper and Nickel Interfaces

Enhancing power generation sustainability of thermoelectric pillars by suppressing diffusion at Bi-Sb-Te/Sn electrode interface using crystalline Co-P coatings