Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

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Investigation of an A-Si/c-si Interface on a C-Si(p) Substrate by Simulation

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Importance of Nanocrystallites in A-Si:H Passivation Layer in Improving the Performance of Silicon Heterojunction Solar Cells

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Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

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Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Application of Interface Treatment at Different Positionp-Nc-si:H Hole Collector of Silicon Heterojunction Cells.

Influence of Low Rate P/I Interface Layer on the Performance of High Growth Rate Microcrystalline Silicon Solar Cells

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Double Layers of Ultrathin A-Si:H and SiNx for Surface Passivation of N-Type Crystalline Si Wafers

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Simulation of a Charged Al2O3 Film as an Assisting Passivation Layer for a-Si Passivated Contact P-Type Silicon Solar Cells