Abstract:A self-isolating, lateral IGBT device with high voltage blocking capability (>700V) high on-state current density (150A/cm(2) at Vds=4V) and very fast turn-off (<50ns), realized in membrane on bulk Si technology is reported here, The device has been manufactured using a standard 5V, 0.35 mu m bulk CMOS process on 8 '' wafers with the addition of two masks: i) n-drift for the HV blocking region and ii) back-side Deep RIE (DRIE) for membrane formation. In comparison to PowerBrane on SOI, earlier reported by us [1,2], PowerBrane on bulk Si LIGBTs offer higher maximum power density due to better thermal dissipation and more robust operation including unclamped inductive switching and short circuit capability. Reliability, of bulk-Si PowerBrane chips in plastic packages has been evaluated through HTRB tests and no failures have been observed after more than 1000 hours of stress. The DRIE step used for selective removal of portions of the silicon substrate, the key feature of PowerBrane technology, offers an effective solution for isolation of the high-voltage power LIGBT(s) from the control circuitry in monolithically integrated Power Ics. In addition, use of bulk Si wafers instead of more expensive SOI substrates reduces the manufacturing costs of PowerBrane-based Power ICs without compromising performance.

ESD Characterization of a 190V LIGBT SOI ESD Power Clamp Structure for Plasma Display Panel Applications

Trigger voltage walk-out phenomenon in SOI lateral insulated gate bipolar transistor under repetitive electrostatic discharge stresses

Lateral IGBT in thin SOI process for high voltage ESD application

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

A Robust Scalable ESD Protection Device integrating Drain side Floating P+ Diffusion with tunable ESD Design Window and effective Latch-up immunity for High-Voltage Power Clamp applications

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology

Power-Rail Esd Clamp Circuit With Parasitic-Bjt And Channel Parallel Shunt Paths To Achieve Enhanced Robustness

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

New Lateral IGBT with Controlled Anode on SOI substrate for PDP scan driver IC

Trigger voltage walk-in effect of ESD protection device in HVCMOS

High Frequency 700v Powerbrane Ligbts In 0.35 Mu M Bulk Cmos Technology

Study of LDMOS-SCR: A High Voltage ESD Protection Device

A Modified LDMOS Device with Improved ESD Protection Performance