Abstract:The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $\delta$-layers, facilitating the exploration of new concepts in classical and quantum computing. Recently it have been shown that two distinct conductivity regimes (low- and high- bias regimes) exist in $\delta$-layer tunnel junctions due to the presence of quasi-discrete and continuous states in the conduction band of $\delta$-layer systems. Furthermore, discrete charged impurities in the tunnel junction region significantly influence the tunneling rates in $\delta$-layer tunnel junctions. Here we demonstrate that zero-charge impurities, or electrical dipoles, present in the tunnel junction region can also significantly alter the tunneling rate, depending, however, on the specific conductivity regime and orientation and moment of the dipole. In the low-bias regime with high-resistance tunneling mode dipole impurities of nearly all orientations and moments can alter the current, indicating the extreme sensitivity of the tunnel current to the slightest imperfection in the tunnel gap. In the high-bias regime with low-resistivity only dipole defects with high moment and orientated in the direction perpendicular to the electron tunneling direction can significantly affect the current, thus making this conductivity regime significantly less prone to the influence of dipole defects with low-moment or dipoles oriented along the propagation direction.

Effective Circuit Theory for the Cusplike Zero-Bias Anomaly in Tunneling Magnetoresistance

Theory of the Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling Via Impurities

Zero-bias anomaly in one-dimensional tunneling contacts

Absence of Zero-Bias Anomaly in Spin-Polarized Vacuum Tunneling in Co(0001).

Impurities and Inelastic Processes in Magnetic Tunnel Junctions

Smearing origin of zero-bias conductance peak in Ag-SiO-Bi-2212 planar tunnel junctions: influence of diffusive normal metal verified with the circuit theory

Inelastic Cotunneling Current and Shot Noise of an Interacting Quantum Dot with Ferromagnetic Correlations

Nonlinear Transport In Tunnel Magnetoresistance Systems

Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles

Current-Induced Switching in Low Resistance Magnetic Tunnel Junctions

Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co2MnSi Electrodes

Low-Bias-Anomaly and Tunnel Fluctuoscopy

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $δ$-layer tunnel junctions

Anomalous Electromagnetic Tunneling in Bianisotropic -Zero Media

Magnetization configurations in current-induced tunnel junction switching

Ac-cotunneling Through an Interacting Quantum Dot in a Magnetic Field

Essential Differences between $ab$ and $c$ Axis Tunneling and Zero Bias Conductance in the Cuprates

Controlling Inelastic Cotunneling Through An Interacting Quantum Dot By A Circularly Polarized Field