Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices

T. Jungwirth,A.H. MacDonald
DOI: https://doi.org/10.1016/S0038-1098%2898%2900357-3
1998-01-15
Abstract:Spin-bottlenecks are created in magnetic-tunnel-junction devices by spatial inhomogeneity in the relative resistances for up and down spins. We propose a simple electrical circuit model for these devices which incorporates spin-bottleneck effects and can be used to calculate their overall resistance and magnetoresistance. The model permits a simple understanding of the dependence of device magnetoresistance on spin diffusion lengths, tunneling magnetoresistance, and majority and minority spin resistivities in the ferromagnetic electrodes. The circuit model is in a good quantitative agreement with detailed transport calculations.
Condensed Matter
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