Abstract:Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 Å) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R) switching for positive applied electrical current (flowing from the bottom to the top lead), characterized by a continuous resistance decrease and associated with current-driven displacement of metallic ions from the bottom electrode into the barrier (thin barrier state). For negative currents, displaced ions return into their initial positions in the electrode and the electrical resistance gradually increases (thick barrier state). We measured the temperature (T) dependence of the electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$ respectively). Experiments showed a weaker R(T) variation when the tunnel junction is in the $R_b$ state, associated with a smaller tunnel contribution. By applying large enough electrical currents we induced large irreversible R-decreases in the studied TJs, associated with barrier degradation. We then monitored the evolution of the R(T) dependence for different stages of barrier degradation. In particular, we observed a smooth transition from tunnel- to metallic-dominated transport. The initial degradation-stages are related to irreversible barrier thickness decreases (without the formation of pinholes). Only for later barrier degradation stages do we have the appearance of metallic paths between the two electrodes that, however, do not lead to metallic dominated transport for small enough pinhole radius.

Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions

Distinguishing Between Tunneling and Injection Regimes of Ferromagnet/Organic Semiconductor/Ferromagnet Junctions

Bias Voltage and Temperature Dependence of Magneto-Electric Properties in Double-Barrier Magnetic Tunnel Junction with Amorphous Co-Fe-B Electrodes

Anomalous Voltage Dependence of Tunnel Magnetoresistance in (zn, Co)O-Based Junction with Double Barrier

Quantum Oscillations of Tunneling Magnetoresistance in Magnetic Tunnel Junctions

Magnon- and Phonon-Assisted Tunneling in a High-Magnetoresistance Tunnel Junction Using Co75Fe25 Ferromagnetic Electrodes

Electrical current-driven pinhole formation and insulator-metal transition in tunnel junctions

Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles

Theory of the Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling Via Impurities

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co2MnSi Electrodes

Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Tunneling Magnetoresistance Effect in Ferromagnet/quantum Dot/superconductor Junctions

Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB

Nonlinear Transport In Tunnel Magnetoresistance Systems

Temperature and Bias-Assisted Transport Properties of LSMO/AlO/CoFeB Magnetic Tunnel Junction

Anomalous negative magnetoresistance in quantum-dot Josephson junctions with Kondo correlations

Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles

Magnetization Reversal Mechanism of Magnetic Tunnel Junctions

Thermal Stability of Ir-Mn∕Co-Fe-B∕Al-O∕Co-Fe-B Tunnel Junctions

unneling Barrier Thickness Dependence of Spin Polarization of Ferromagnet in Magnetic Tunnel Junctions