Theory of the Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling Via Impurities

L Sheng,DY Xing,DN Sheng
DOI: https://doi.org/10.1103/physrevb.70.094416
IF: 3.7
2004-01-01
Physical Review B
Abstract:Using the closed-time path-integral approach, we nonperturbatively study inelastic tunneling of electrons via magnetic impurities in the barrier accompanied by phonon emission in a magnetic tunnel junction. The spectrum density of phonon emission is found to show a power-law infrared singularity similar toomega(-(1-g)) with g the dimensionless electron-phonon coupling. As a consequence, the tunneling conductance G(V) increases with bias voltage <\V\ as G(V)-G(0)similar to\V\(2g), exhibiting a discontinuity in slope at V=0 for g <= 0.5. This theory can reproduce both cusplike and noncusplike features of the zero-bias anomaly of tunneling resistance and magnetoresistance widely observed in experiments.
What problem does this paper attempt to address?