Absence of Zero-Bias Anomaly in Spin-Polarized Vacuum Tunneling in Co(0001).

HF Ding,W Wulfhekel,J Henk,P Bruno,J Kirschner
DOI: https://doi.org/10.1103/physrevlett.90.116603
IF: 8.6
2003-01-01
Physical Review Letters
Abstract:In a joint experimental and theoretical study, we investigate the bias-voltage dependence of the tunnel magnetoresistance (TMR) through a vacuum barrier. The TMR observed by spin-polarized scanning tunneling microscopy between an amorphous magnetic tip and a Co(0001) sample is almost independent of the bias voltage at large tip-sample separations. Whereas qualitative understanding is achieved by means of the electronic surface structure of Co, the experimental findings are compared quantitatively with bias-voltage dependent first-principles calculations for ballistic tunneling. At small tip-sample separations, a pronounced minimum in the experimental TMR was found at +200 mV bias.
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