Progresses in the Development of CdZnTe Unipolar Sensing Detector For Medical Imaging

ZHANG Qiushi,LU Yanye,XIE Zhaoheng,YANG Kun,REN Qiushi

DOI: https://doi.org/10.16818/j.issn1001-5868.2013.02.002

2013-01-01

Abstract:The CdZnTe semiconductor is now regarded as the most promising candidate for the next generation of gamma ray detectors,providing good stopping power for gamma rays,lightweight camera heads and improved energy resolution.However,the performance of CdZnTe detector is limited mainly by incomplete charge collection problem resulted from hole trapping.Single charge sensing technique is the most effective way for solving the trapping problem with some electronic correction methods.Firstly,the methods and techniques for improving the performance of CdZnTe detectors were reviewed.Then the single charge sensing techniques were summarized in detail.CdZnTe detectors of different geometries were discussed particularly,covering the principles of the electrode geometry design,some detector prototypes development and special correction techniques to improve the energy resolution.Finally,future development of CdZnTe detector is also discussed.