Effects of deep-level traps on the transport properties of high-flux X-ray CdZnTe detectors

Yingrui Li,Gangqiang Zha,Yu Guo,Shouzhi Xi,Lingyan Xu,Hui Yu,Wanqi Jie
DOI: https://doi.org/10.1016/j.mssp.2021.105974
IF: 4.1
2021-10-01
Materials Science in Semiconductor Processing
Abstract:<p>Polarization effect has become one of the main factors that limit the application of CdZnTe X-ray photon-counting detectors. In this study, we systematically investigate the impact of deep-level traps on the carrier transport properties and explore its underlying correlation with the polarization effect. Besides, the critical deep-level traps affecting photon counting performance are identified. Two types of CdZnTe detectors with significant differences in counting performance are explicitly selected for comparative research. The carrier transport characteristics are discussed by analyzing X-ray and γ-ray energy spectrum responses. The data shows the detectors with larger <em>(μτ)</em><sub><em>h</em></sub> and smaller <em>(μτ)</em><sub><em>e</em></sub> have better photon counting performance. This type of detectors can withstand higher X-ray doses without polarization. However, their relatively poor electron transport performance will reduce the detection efficiency. We comprehensively analyzed the TSC and i-DLTS results to obtain deep-level trap characteristics of the two types of CdZnTe detectors. The results indicate that CdZnTe detectors with good hole transport properties and photon counting performance have fewer<span class="math"><math> Tei</math></span>, Te secondary phases and Te precipitates related defects identified as deep hole traps with large capture cross-sections. Their larger <span class="math"><math>Tecd2+</math></span> concentration, which acts as a deep electron trap, should be responsible for poor electron transport properties and consequently reduced detection efficiency.</p>
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the influence of deep - level traps on the transmission performance of CdZnTe (cadmium - zinc - telluride) X - ray photon - counting detectors. Specifically, the study focuses on how these deep - level traps affect the carrier transport characteristics and explores the potential relationship between them and the polarization effect. In addition, the paper also identifies the key deep - level traps that affect the photon - counting performance. By selecting two CdZnTe detectors with significant differences in counting performance for a comparative study, the authors analyzed the X - ray and γ - ray energy - spectrum responses to discuss the carrier transport characteristics. The study found that detectors with a larger (μτ)_h (hole mobility - lifetime product) and a smaller (μτ)_e (electron mobility - lifetime product) exhibit better photon - counting performance. Such detectors can operate at higher X - ray doses without polarization, but their relatively poor electron - transport performance reduces the detection efficiency. To gain a deeper understanding of the characteristics of these deep - level traps, the researchers also comprehensively analyzed the results of thermally stimulated current (TSC) and current deep - level transient spectroscopy (i - DLTS). These analyses helped to determine the deep - level - trap characteristics in the two types of CdZnTe detectors, including activation energy, capture cross - section, and trap density. The research results show that CdZnTe detectors with good hole - transport characteristics and photon - counting performance contain fewer Tei, Te secondary - phase, and Te - precipitation defects related to deep - hole traps, while a larger Te^{2+} concentration, as a deep - electron trap, is responsible for the poor electron - transport performance and the consequent reduction in detection efficiency.