Study on the Mechanism of Using IR Illumination to Improve the Carrier Transport Performance of CdZnTe Detector

Yifei Mao,Jijun Zhang,Liwen Lin,Jianming Lai,Jiahua Min,Xiaoyan Liang,Jian Huang,Ke Tang,Linjun Wang
DOI: https://doi.org/10.1088/1361-6641/aab01e
IF: 2.048
2018-01-01
Semiconductor Science and Technology
Abstract:Different wavelength IR light (770-1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (mu tau*) of CdZnTe achieved 10(-2) cm(2) V-1 when the IR wavelength was in the range of 820-920 nm, but decreased to 1. x. 10(-4) cm(2) V-1 when the wavelength was longer than 920 nm. The mechanism about how IR light affecting the carrier transport property of CdZnTe detector was analyzed with Shockley-Read-Hall model. The defect of doubly ionized Cd vacancy ([V-Cd](2-)) was found to be the main factor that assist IR light affecting the mu tau of CdZnTe detector. The photoconductive experiment under 770-1150 nm IR illumination was carried out, and three kinds of photocurrent curve were detected and analyzed by solving the Hecht equation. The experiments demonstrated the effect of [V-Cd](2-) efect on the carrier transport property of CdZnTe detector under IR illumination.
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