Multi-energy Detection Using CdZnTe Semiconductor Detectors

Lan Zhang,Yuanjing Li,Xiaocui Zheng,Zhi Deng,Weibin Zhu,Nan Yao

DOI: https://doi.org/10.1109/nssmic.2008.4775200

2008-01-01

Abstract:The CdZnTe semiconductor detectors have been widely applied in radiation detection, space physics, medical imaging systems and security inspection field. In order to improve the imaging quality and to provide material identification, dual energy and multi-energy detection technology are often necessary. Here we provide a CdZnTe multi-energy detection technology. Micro-strip anode are separated to several segments along the X ray incidence direction. These different segments of electrodes are used as different energy detection regions, from low energy regions to high energy regions. Under this contact geometry the multi-energy information could be obtained, at the same time the detection efficiency of CdZnTe detectors could be improved by the increase of the detector size, not the thickness. So the charge collection efficiency and the operation voltage would be kept invariable. This technology will also solve the problem that the low energy detector is too thin to fabricate for traditional dual energy solid detectors. The data correction in different energy regions could be performed according to the simulation results of the energy deposition distribution in CdZnTe detectors of different energy X rays. This paper provides the details of the multi-energy detection technology.