Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Fabrication of Patterned Sapphire Substrate by Wet Chemical Etching for Maskless Lateral Overgrowth of GaN

Lateral Epitaxial Overgrowth of GaN Films on Patterned Sapphire Substrates Fabricated by Wet Chemical Etching

Investigation of Characteristics of Laterally Overgrown GaN on Striped Sapphire Substrates Patterned by Wet Chemical Etching

Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

Nucleation Mechanism for Epitaxial Growth of GaN on Patterned Sapphire Substrates

Selective Growth of GaN on Slope Cone-Shaped Patterned Sapphire Substrate

Study on Patterned Sapphire Substrate by Wet Etching

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Etch‐pits and Threading Dislocations in Thick LEO GaN Films on Sapphire Grown by MOCVD

Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask

Step-edge-guided Nucleation and Growth Mode Transition of Α-Ga2o3 Heteroepitaxy on Vicinal Sapphire

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN