Abstract:The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of non-perturbative and non-Markovian treatment. We employ a Caldeira-Leggett Hamiltonian with an effective potential calculated self-consistently, accounting for the electron distribution. With this Hamiltonian, we use the reduced hierarchy equations of motion in the Wigner space representation to study non-Markovian and non-perturbative thermal effects at finite temperature in a rigorous manner. We study current variation in time and the current-voltage (I-V) relation of the resonant tunneling diode for several widths of the contact region, which consists of doped GaAs. Hysteresis and both single and double plateau-like behavior are observed in the negative differential resistance (NDR) region. While all of the current oscillations decay in time in the NDR region in the case of a strong system-bath coupling, there exist self-excited high-frequency current oscillations in some parts of the plateau in the NDR region in the case of weak coupling. We find that the effective potential in the oscillating case possesses a basin-like form on the emitter side (emitter basin) and that the current oscillation results from tunneling between the emitter basin and the quantum well in the barriers. We find two distinct types of current oscillations, with large and small oscillation amplitudes, respectively. These two types of oscillation appear differently in the Wigner space, with one exhibiting tornado-like motion and the other exhibiting a two piston engine-like motion.

Current Self-Oscillations in Negative Effective Mass Terahertz Oscillators

Current Self-Oscillation and Driving-Frequency Dependence of Negative-Effective-mass Diodes

Chaotic Dynamics in Terahertz-Driven Semiconductors with Negative Effective Mass

Spectrum Dynamics of Negative-Effective-Mass Oscillators under Terahertz Radiation

Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira-Leggett Hamiltonian

Velocity-field characteristics of semiconductors with negative- effective- mass

Physical Principles of the Amplification of Electromagnetic Radiation Due to Negative Electron Masses in a Semiconductor Superlattice

Multiple-Frequency Current Oscillations in Gaas-Algaas Quantum Wells Containing A Thin Semi-Insulating Layer

Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Robust Negative Differential Conductance and Enhanced Shot Noise in Transport Through a Molecular Transistor with Vibration Assistance

Tunable antiresonance, Fano interference, and negative differential conductance in serially-coupled vibrating molecular

Negative Damping of Terahertz Plasmons in Counter-streaming Double-layer Two-dimensional Electron Gases

Controllable Antiresonance and Low-Bias Negative Differential Conductance in T-shaped Double Dots with Electron-Phonon Interaction

Acoustic and optical plasmons excitation in double-channel AlGaN/GaN HEMT under asymmetric boundaries

Suppressed absolute negative conductance and generation of high-frequency radiation in semiconductor superlattices

Simple model for frequency response of a resonant tunneling diode caused by potential change of quantum well due to electron charge

Current-oscillator Correlation and Fano Factor Spectrum of Quantum Shuttle with Finite Bias Voltage and Temperature.

Submillimeter Wave Induced Resistance Oscillations in Ultra-High Mobility Two-Dimensional Electron Systems

Elimination of Negative Differential Conductance in an Asymmetric Molecular Transistor by an Ac-Voltage

Nonequilibrium Kondo Regime Current Noise Spectrum of Quantum Dot Systems with the Single Impurity Anderson Model