Abstract:We report on a detailed theoretical study of current self-oscillations and chaotic dynamics in negative effective mass (NEM) p(+)pp(+) diodes driven by dc and ac electric fields with a terahertz (THz) frequency. An "N-shaped" velocity-field relation is yielded by using the nonparabolic balance-equation theory with a realistic treatment of carrier scatterings by impurity, acoustic phonon, and optic phonon. The dependence of the self-oscillating mode and its frequency on the de bias, doping concentration, and lattice temperature is examined in detail. The THz-driven p(+)pp(+) NEM diodes can produce a cooperative nonlinear oscillatory mode which leads to very complicated chaotic dynamics with the de bias, ac amplitude, and ac frequency as the controlling parameters. The transitions between the periodic and chaotic states are carefully studied by differ ent chaos-detecting methods, such as phase portrait, Poincare bifurcation diagram, power spectrum, and first return map. The resulting power spectrum bifurcation diagram displays a very complicated mosaic structure with a self-similar emergence of high-order mixing frequencies.

Chaotic Dynamics in Terahertz-Driven Semiconductors with Negative Effective Mass