Abstract:The frequency dependence of negative differential conductance (NDC) is an important property for the resonant-tunneling-diode terahertz source. Among several phenomena determining the frequency dependence, this paper shows that the effect of potential change of the quantum well due to electron charge can be analyzed with a simple and tractable model based on the tunneling admittance and capacitance. The result is identical to that of Feiginov's analysis based on more fundamental equations, showing a one-to-one correspondence between the parameters of the two analyses. Similar to Feiginov's analysis, our analysis also shows that NDC remains finite even at infinitely high frequency. It is shown in our model that this result is attributed to neglecting the tunneling time at the emitter barrier. Comprehensive analysis of the frequency dependence of NDC will be possible by incorporating the tunneling time into the present model.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Analyze the frequency dependence of negative differential conductance (NDC) in resonant tunneling diodes (RTDs) due to the change in quantum - well potential**. Specifically, the author studies the following aspects through a simplified model: 1. **The influence of the quantum - well potential due to the change in electron charge**: This potential change has a significant impact on the frequency response of NDC. 2. **Modeling of tunnel conductance and capacitance**: Tunnel conductance and capacitance are introduced to describe the electron flow and potential change in RTDs. 3. **Comparison with Feiginov's previous work**: It is verified that the results of the simplified model are consistent with Feiginov's analysis results based on more fundamental equations, and a one - to - one correspondence between the parameters of the two is established. 4. **NDC characteristics in the high - frequency limit**: It is explained why NDC still maintains a finite value at an infinitely high frequency, which is attributed to the neglect of the tunneling time at the emitter barrier. ### Main contributions of the paper - **Validity of the simplified model**: It is proved that the simplified model using tunnel conductance and capacitance can accurately describe the frequency dependence of NDC caused by the change in quantum - well potential. - **Parameter correspondence**: A one - to - one parameter correspondence between the simplified model and Feiginov's analysis is established, ensuring the consistency of the two methods. - **Explanation of high - frequency NDC characteristics**: The reason why NDC remains finite in the high - frequency limit is revealed, and the influence of neglecting the tunneling time of the emitter barrier is pointed out. - **Future research directions**: The possibility of incorporating the tunneling time and the residence time in the quantum well into the model for a more comprehensive analysis is proposed. ### Summary of mathematical formulas To better understand these phenomena, some key formulas are involved in the paper: 1. **Current density under steady - state conditions**: \[ J_e = J_c = \frac{T_e T_c}{T_e + T_c} N_e \] \[ N_{qw} = \frac{T_e}{T_e + T_c} N_e \] 2. **Differential conductance of the emitter barrier**: \[ G_e = \frac{\partial J_e}{\partial V_e} = \frac{T_c}{T_e + T_c} \left( T_e' \frac{T_c}{T_e + T_c} N_e + T_e N_e' \right) \] 3. **Basic equations for AC components**: \[ j_e = T_e' (N_e - N_{qw}) v_e + T_e (n_e - n_{qw}) \] \[ j_c \approx T_c n_{qw} \] \[ \frac{d n_{qw}}{dt} = j_e - j_c \] 4. **Admittance in the equivalent circuit**: \[ Y_e = \frac{1 + j \omega \tau_c}{1 + j \omega \tau_{dwed}} \] where, \[ \tau_c = \frac{1}{T_c}, \quad \tau_{dwed} = \frac{1}{T_e + T_c} \] 5. **Frequency response of NDC**: \[ Y_{RTD} = G_\infty + \frac{G_0 - G_\infty}{1 + j \omega \tau_{res}} \] where, \[ G_0 = \frac{G_e C_c}{\tau_c G_e + C_e + C_c}, \quad G_\infty = G_e \left( \frac{C_c}{C_e + C_c} \right)^2 \frac{\tau_c}{\tau_{dwed}}, \quad \tau_{res}

Simple model for frequency response of a resonant tunneling diode caused by potential change of quantum well due to electron charge

Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira-Leggett Hamiltonian

Tunable antiresonance, Fano interference, and negative differential conductance in serially-coupled vibrating molecular

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

A Non-Quasi-Static Model for Tunneling FETs Based on the Relaxation Time Approximation

Admittance of A One-Dimensional Double-Barrier Resonant Tunneling Nanostructure

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Gate-tunable negative differential conductance in hybrid semiconductor-superconductor devices

Optimized quantum drift diffusion model for a resonant tunneling diode

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Compact Model of Nanowire Tunneling FETs Including Phonon-Assisted Tunneling and Quantum Capacitance

Anti-Resonances Of Tunneling Through A Quantum Wire With Side-Coupled Quantum Dots

Controllable Antiresonance and Low-Bias Negative Differential Conductance in T-shaped Double Dots with Electron-Phonon Interaction

Modelling shallow confinement in tuneable quantum dots

Negative Differential Resistances in Graphene Double Barrier Resonant Tunneling Diodes

Many-body excitations in tunneling current spectra of a few-electron quantum dot

Time-Dependent Electron Tunnelling Through A Quantum Dot With Coulomb Interactions

Tunneling Resonances and Andreev Reflection Through an Interaction Quantum Dot Coupled with Two Half Metals and A Superconductor

Thermal conductance of a weakly coupled quantum dot

Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles