Abstract:High efficiency thin-film silicon (Si) solar cells were prepared on flexible substrates by the plasma-enhanced chemical vapor deposition method. To improve their performance, the microstructural, electrical, and optical properties of the core component layers including the metal rear reflectors, p- and n-type doped layers, and intrinsic absorber layers were controlled sophistically. To enable the use of flexible substrates with low heat resistance as well as to enhance light-scattering properties, nanotextured rear reflectors with a Ag/Al:Si bilayer structure were developed by dc magnetron sputtering at a low substrate temperature of below 150 degrees C. Highly crystalline n-doped seed layers (which effectively eliminate a defect-dense amorphous region formed in the initial growth stage of intrinsic nanocrystalline silicon (nc-Si:H) absorber layers) and p-type wide-bandgap nanocrystalline silicon carbide (nc-SiC:H) window layers (which reduce the parasitic absorption loss in the short wavelength region and increase the open circuit voltage (Voc)) were successfully applied to enhance the performance characteristics of the solar cells. Through the combination of the developed core component layers, high conversion efficiencies of 8.84% (V-oc = 0.53 V, J(sc) = 25.28 mA/cm(2), and fill factor (FF) = 0.66, where J(sc) is the short circuit current) and 7.48% (V-oc = 0.50 V, J(sc) = 21.07 mA/cm(2), and FF = 0.71) were obtained for nc-Si:H solar cells fabricated on stainless steel (SUS) and polyimide substrates, respectively, at a low substrate temperature of below 150 degrees C. Flexible a-Si:H/nc-Si:H double-junction solar cells fabricated on SUS substrates showed a high conversion efficiency of 11.46% (V-oc = 1.38 V, J(sc) = 11.53 mA/cm(2), and FF = 032) when the nc-Si:H solar cells developed in this study were applied as a bottom cell.

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The Influence of N-Layer on Properties of Microcrystalline Silicon Solar Cells on Flexible Substrates

Doped Microcrystalline Silicon Layers for Solar Cells by 13.56 Mhz Plasma-Enhanced Chemical Vapour Deposition

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Wide Bandgap P-Type Nanocrystalline Silicon Oxide As Window Layer for High Performance Thin-Film Silicon Multi-Junction Solar Cells

Application of dual-layer polysilicon deposited by PECVD in n -type TOPCon solar cells

The 18.3% Silicon Solar Cells with Nano-Structured Surface and Rear Emitter

Silicon Nanocrystal Conjugated Polymer Hybrid Solar Cells with Improved Performance

Performance Optimization of P-I-n Type Microcrystalline Silicon Thin Films Solar Cells Deposited in Single Chamber

Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

High Performance Nanostructured Silicon-Organic Quasi P-N Junction Solar Cells Via Low-Temperature Deposited Hole and Electron Selective Layer.

Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells

Performance Enhancement of Thin-Film Silicon Solar Cells by Development of Core Component Layers

Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells