Research on the CMP of NiP/Al basic substrate with Al_2O_3 composite abrasive

MA Peng-Fei,ZHANG Ping,JIANG Chun-Dong,WU Jiang
DOI: https://doi.org/10.3969/j.issn.0490-6756.2013.05.030
2013-01-01
Abstract:On the basis of Al2O3 surface modification,the polishing slurry was prepared with aluminum oxide,hydrogen peroxide,water and sodium hydroxide as the main components,and the CMP properties of NiP/Al basic substrate were studied.Under the conditions of different polishing pressures,pads speeds,time and pH values,the material removal rate was measured by micrometer.The surface roughness and morphology of hard disk substrate polished were characterized by AFM,and the CMP mechanism of Al2O3 polishing slurry was analyzed.The best polishing process parameters obtained are as follows:Pads rate of 30r/min,polishing pressure of 2.1kPa,polishing time of 60min,polishing slurry pH value of 9,and Ra of 4.67nm at the moment.
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