Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

Characterizations And Luminescence Properties Of Annealed Porous Silicon Films

Al-assisted Anodic Etched Porous Silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Influence of Microstructure on Optical Properties of Porous Silicon

Annealing and amorphous silicon passivation of porous silicon with blue light emission

Effect of annealing on photoluminescence of passivated porous silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Luminescence and photoconductivity properties of porous polycrystalline silicon

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Studies on microstructure and photoluminescence property of porous silicon

Intense And Stable Blue-Violet Emission From Porous Silicon Modified With Alkyls

Preparation Of Porous Silicon Using Anodizing And Suppercritical Drying

Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities

Effect of post-treatment processes on the photoluminescence of porous silicon

Photoluminescence of oxidized porous silicon under UV-light illumination

Relationship Between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

Dynamic and Photoluminescence Behavior of Nanocrystallites and Bulk Porous Silicon Texture

Preparation and Characterization of Freestanding Porous Silicon Films with High Porosities

Ultraviolet light emission from oxidized porous silicon