Study on Electroless Deposition Nimop Layer by Sam

Liu Lu,Yang Zhigang,Liu Dianlong,Zhang Chi
DOI: https://doi.org/10.3321/j.issn:1002-185x.2009.05.032
2009-01-01
Rare Metal Materials and Engineering
Abstract:Electroless deposition NiMoP barrier for Cu interconnects was prepared on SiO2/Si substrate by self-assembled monolayer (SAM) activated with PdCl2. The effects of MnO42- concentration, temperature and pH value on NiMoP layer were investigated by the methods of X-ray fluorescence (XRF), X-ray diffraction (XRD), scan electron microscope (SEM) and four-point probe. The experimental results indicate that Mo and P in the layer are restricted each other; as the content of MnO42- increases, the deposition rate increases, the film structure transforms from amorphous to crystal, and the layer resistivity decreases; as the temperature increases, the deposition rate increases; within a certain range of pH value, the deposition rate increases with the increase of pH value. The changes of the layer grain size and the deposition rate have the same trend.
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