Electroless Nimop Thin Film Deposition On Si/Sio2

Qiang Ling,Jian Cai,Shuidi Wang,Huiyou Zhao
DOI: https://doi.org/10.1109/ICEPT.2007.4441459
2007-01-01
Abstract:NiMoP is one of the most important barrier layers for Cu interconnection. A pretreatment for initiating electroless plating on Si/SiO2 based on palladium ion grains chemisorption on. self-assembled monolayers (SAMs) of amidogen of silane coupling agent has been developed. The process and properties of electroless plating NiP/NiMoP compound thin films on Si/SiO2 substrate have been investigated. When concentration ratios of [MoO42-]/[Ni2+] is at 0.02 similar to 0.1, atom percent of phosphoric in NiMoP layer is about 4%, and the NiMoP film has typical mixed-crystal structure consist of the crystal Ni phase and the non-crystal Mo phase. The grain size, is about 50nm. The NiMoP film has diffusion barrier effect at high temperatures up to 400 degrees C. The adhesion with the surface of SiO2/Si can be improved obviously by adding NiP transition layer and 200 degrees C annealing treatment in nitrogen atmosphere.The NiP/NiMoP compound thin films exhibit high integrality and uniformity, good neatness degree, low surface roughness, strong adhesion and low resistivity. In all, NiMoP barrier layer has a potential use for preventing copper-to-silicon diffusion for the application of 3D packaging with TSVs.
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