Study of the Porosity of Porous Silicon and Residual Stress along Cross-section

LIANG Ji-ran,HU Ming,DOU Yan-wei,LEI Zhen-kun,FANG Zhen-qian,KANG Yi-lan

DOI: https://doi.org/10.3969/j.issn.1004-2474.2006.04.022

2006-01-01

Abstract:The porous silicon were prepared on highly doped p-type silicon(100) wafer using electrochemical etching.The porosity is determined gravimetrically by weight loss after anodization and stripping in dilute KOH solutions,and the relation of porosity and etching depth was studied,residual stress was measured by Micro-Raman spectroscopy along cross-section.The results show that the porosity of porous silicon increases firstly and then decreases with etching time/depth,the tensile residual stress along cross-section increases firstly,then decreases gradually to the regions near the interface between the porous silicon layers and the Si substrate.A compressive stress appears at the interface near to the Si substrate.The tensile residual stress is proportional to porosity.The largest tensile stress appears on the area under surface of porous silicon.It is correlated with the reduction of HF concentration in the pore and a dipole layer at c-Si/electrolyte interface.