Abstract:Material crystallinity is paramount in determining the photoelectric performances and device applications. Moreover, a high-quality crystalline layer, especially a multilayer film or a heteroepitaxial film, is continuously explored to cater for low defect density and ultrahigh structure integrity as well as low cost, yet is challenging. In this study, the crystallization effect of Ge/Si heteroepitaxial nanofilms (<100 nm) is investigated in detail to pursue low crystallization temperature and the underlying mechanism. It is demonstrated that the crystallinity and the crystallographic orientation of the underlying layer can tune the crystallization behavior of the upper-layer film. This interfacial inducing effect on crystallization originating from the buffer layer is verified on inversed architecture of the Si/Ge film and is proposed to be the microcrystal-induced crystallization (MIC) effect. Based on a point-defect model describing an order/disorder microcrystal structure, the MIC effect is flexibly supported by the results of binding energy and charge transfer via first-principles calculations for the first time. This work also provides a facile strategy and theoretical support to prepare high-crystalline multilayer films or intact crystals for urgent microelectronics and optoelectronics applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00373.Ge–Ge peak fitting and crystallinity of the Ge/a-Si specimen in Raman spectra, AFM images of samples prepared at different conditions, Raman spectra of different samples, crystallinity trend and the graph of root-mean-square (RMS) surface roughness, XRD spectra and the X-ray diffraction data of the 300 nm Ge film, unoptimized atomic structures of Ge microcrystalline, optimized atomic structures and differential charge densities, and specific values of binding energy and charge transfer (PDF)This article has not yet been cited by other publications.

Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing.

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Synthesis of Ge nanocrystals in thermal SiO2 films by Ge+ ion implantation

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Formation Mechanism of Ge Nanocrystals Embedded in SiO2studied by Fluorescence X-Ray Absorption Fine Structure

Fabrication of Luminescent Ge Nanocrystals Started from Unlayered Hydrogenated Amorphous Sige Films or Hydrogenated Amorphous Si Hydrogenated Amorphous Ge Multilayers

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Growth of Embedded Ge Nanocrystals on Different Substrates

A New Method for Preparing Ge Nano-Crystallites Embedded in Siny Matrices

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

Study on Nanocrystalline Ge Formed Directly by High Dose Ge Ion Implantation

A New Approach for Synthesizing Ge Quantum Crystallites Embedded in A Sin(X) Films

Raman scattering and room-temperature visible photoluminescence from Ge nanocrystals embedded in SiO2 thin films

Structural and Electrical Properties of Laser-Crystallized Nanocrystalline Ge Films and Nanocrystalline Ge/SiNxmultilayers