Abstract:The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.

Thermal neutron induced soft error rate measurement in semiconductor memories and circuits

Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

Influence of 0.1-10 MeV neutron-induced SEUs on estimation of terrestrial SER in a nano-scale SRAM

Measurement of Neutron-induced Single Event Upset Cross-Section of UltraScale Kintex FPGA Using Time-of-Flight Technique

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Energy Dependence of Atmospheric Neutron-Induced Failures in Silicon Carbide Power Devices

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Neutron Irradiation Testing and Analysis of a Fault-Tolerant RISC-V System-on-Chip

SERSim: a Soft Error Rate Simulator and a Case Study for a 32-Bit OpenRisc 1200 Microprocessor

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

Soft error evaluation in SRAM using alpha sources

Aging-temperature-and-propagation Induced Pulse-Broadening Aware Soft Error Rate Estimation for Nano-Scale CMOS

Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam

Neutron-induced effects on a self-refresh DRAM

Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak

Neutron Induced Single Event Effects on Near Memory Computing Architecture AI Chips

Atmospheric Neutron Single Event Effect Test on Xilinx 28 Nm System on Chip at CSNS-BL09

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

A Novel Soft Error Immunity SRAM Cell

Electron Inducing Soft Errors in 28 Nm System-on-chip