SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA
Chang Cai,Shuai Gao,Peixiong Zhao,Jian Yu,Kai Zhao,Liewei Xu,Dongqing Li,Ze He,Guangwen Yang,Tianqi Liu,Jie Liu
DOI: https://doi.org/10.3390/electronics8121531
IF: 2.9
2019-12-12
Electronics
Abstract:Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.
engineering, electrical & electronic,computer science, information systems,physics, applied