Abstract:An approach to grow high quality strain-relaxed Ge by reduced pressure chemical vapor deposition system has been proposed in this paper. Prior to epitaxial growth high quality Ge layer, an ultrathin Si0.75Ge0.25/Si superlattice buffer layer with thickness of 54nm and a 460nm Ge seed layer were deposited successively at low temperature. Then an 840nm thickness Ge layer was grown at high temperature for faster deposition rate. After achieving high-temperature annealing at hydrogen atmosphere, the root-mean-square roughness of the epitaxial Ge lowers to 0.61nm at 10×10μm2 scan area, and the threading dislocation density is 1×106cm−2. Micro-Raman spectra manifests the extremely uniform distribution of tensile strain in Ge layer at room temperature, which can be contributed to the higher thermal expansion coefficient of Ge than that of Si. In contrast to the epitaxial Ge sample without buffer layer, the crystal quality and Hall hole mobility of the Ge epilayer incorporated ultrathin Si0.75Ge0.25/Si buffer improve significantly, indicating that the ultrathin low temperature Si0.75Ge0.25/Si superlattice buffer layer plays an important role on fabricating high quality Ge epilayer.

Strain Relaxation Of Gesi Alloy With Low Dislocation Density Grown On Low-Temperature Si Buffers

Relaxed GeSi Alloy Grown on Low-Temperature Buffers by MBE

Relaxed Ge0.9si0.1 Alloy Layers with Low Threading Dislocation Densities Grown on Low-Temperature Si Buffers

Promoting Strain Relaxation of Si0.72ge0.28 Film on Si (100) Substrate by Inserting A Low-Temperature Ge Islands Layer in Uhvcvd

Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Comment On "Use Of Si+ Pre-Ion-Implantation On Si Substrate To Enhance The Strain Relaxation Of The Gexsi1-X Metamorphic Buffer Layer For The Growth Of Ge Layer On Si Substrate" [Appl. Phys. Lett. 90, 083507 (2007)]

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Strain Relaxation of Si0.75ge0.25 in Hydrogen-Implanted Si0.75ge0.25/B-Doped Si0.70ge0.30/Si Heterostructure

Ultrathin Low Temperature Sige Buffer For The Growth Of High Quality Ge Epilayer On Si(100) By Ultrahigh Vacuum Chemical Vapor Deposition

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth

Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method

Point Defects in Relaxed Si1-xGex Alloy Layers

Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System