Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Point Defects in Relaxed Si1-xGex Alloy Layers

Point Defects in SiGe Alloys: Structural Guessing Based on Electronic Transition Analysis

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Strain Relaxation Of Gesi Alloy With Low Dislocation Density Grown On Low-Temperature Si Buffers

Interstitial-carbon-related defects in relaxed SiGe alloy: the effect of alloying

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Relaxed Ge0.9si0.1 Alloy Layers with Low Threading Dislocation Densities Grown on Low-Temperature Si Buffers

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Irradiation-induced Defects in SiGe

The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers

Relaxed GeSi Alloy Grown on Low-Temperature Buffers by MBE

Interstitial-Carbon Defects In Si1-Xgex

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Defects and Strain in Ge x Si 1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

Strain Relaxation and Defect Formation in Heteroepitaxial Si1−xGex Films Via Surface Roughening Induced by Controlled Annealing Experiments

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Lattice Mismatch, Mechanical Properties and Lattice-Compensation Effect in Si1-xGex Alloys by Using First-Principles Calculations Combined with Virtual Crystal Approximation

Stable and Metastable Configurations of Iron Atoms in SiGe Alloys