Abstract:This paper systematically reviews the progress on the HgCdTe (MCT) material deposition via molecular-beam epitaxy (MBE) and previously reported atomistic approaches used to model the MCT epitaxy. The structure design and fabrication of the infrared (IR) detection systems require highly crystalline MCT films. The state-of-the-art of the MBE growth processes of Hg1−xCdxTe films over Si, GaAs, GaSb, and CdZnTe substrates are reported here from an atomistic simulation perspective. The most advanced in-house-developed kinetic Monte Carlo (kMC) technique, coupled with the geometry of the MBE reactor (implemented in the TNL-EpiGrowTM simulator) is exploited to reproduce real-time MBE experiments. The ability to track each atom involved in the adsorption, diffusion, and desorption processes over the lattice provides deeper insights. The ability to map various defects quantitatively and qualitatively during the growth process in a layer-by-layer and island mode helps to provide a proper understanding of their formation. The TNL-EpiGrowTM simulator provides an innovative and cost-effective solution for the epitaxial growth processes associated with MBE, CVD, and MOCVD reactors for most semiconductors. The types of defects, their position over the lattice, layer-by-layer strain, surface roughness, lattice parameters are easily extractable and provide an unmatched solution. However, it is very difficult to realize similar solutions through sophisticated instruments. Si, GaAs, GaSb, and CdZnTe substrates have been used to reproduce the MBE process of Hg1−xCdxTe (x ≈ 0.55). The vacancies and dislocation densities are reported here to characterize the cases of MCT epitaxy on the four different substrates. The growth rates of CdTe and MCT have been benchmarked against the experimental data (Pacuski et al. in Cryst Growth Des 17(6):2987, 2017; Wijewamauriya et al. in Appl Phys Lett 51(24):2025, 1987). The output results revealed that CdZnTe is the most attractive substrate choice but, due to its technological challenges, GaSb can replace it and is the most suitable option for the growth of Hg1−xCdxTe as compared to Si and GaAs substrates under similar conditions. The results reported here also support the experimental findings (Gu et al. in J Cryst Growth 468:216, 2017). The dislocations and vacancies generated in the GaSb substrate are comparable to those in the CdZnTe substrate.

n-type doping of MCT layers grown by MOVPE (IMP)

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

The Growth and Properties of In-Doped Metalorganic Vapor-Phase Epitaxy Interdiffused Multilayer Process (Hgcd)te

LPMOVPE grown GaAs:C films

In Doping on MBE Grown HgCdTe

Control of VO•• ∼ TiTi′ Dipole Pairs As Well As MgTi″ Defects on Dielectric Properties of Mg Doped (pb0.35sr0.65)tio3 Thin Film

N-Type Doping of Highly Tetrahedral Diamond-Like Amorphous Carbon

Heavily Carbon-Doped Gaas Grown by Movpe Using Carbon Tetrabromide for Hbts

P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS

Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Fabrication of 100-Nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Novel doping alternatives for single-layer transition metal dichalcogenides

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors

Effect Of Indium Ambient On Electrical Properties Of Mg-Doped Alxga1-Xn

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

1.0 Μm Gate-Length InP-based InGaAs High Electron Mobility Transistors by Mental Organic Chemical Vapor Deposition

High-quality metamorphic HEMT grown on GaAs substrates by MBE