Abstract:As one of potential photoelectric material, zinc oxide attracted a lot of attentions recently. Such as, its wide band gap (3.37 eV) and high excitonic binding energy of 60 meV make ZnO as a good candidate for developing short wavelength optical devices. Furthermore, the p-doping ZnO can be produced and the p-n structure of ZnO can be formed on the silicon substrate, both of characteristics make ZnO to be compatible with Si-based integrated circuits. Hence, ZnO film has wider application in opto-electronic industries.ZnO films can be easily prepared by reactive sputtering. techniques However, the surface state which caused by damages of bulk silicon surface and lattice mismatch impurity which contaminated in fabrication procedure can produce the level of surface state and deep level in heterojunction. Those levels affect the carries a lot.Generally the level formed by defects can reduce illuminant efficiency, producing non-radiation recombined, but deep level can also become efficient illuminant centre using wide band gap materials. So it is deserved to study deeply of the behavior of ZnO/p-Si heterojunction interface state. The high frequency C-V character can be used to measure the charge of space charge region varied with the voltage variation, this effect of capacitance can be described by differential capacitance. The C-V measurement supplied an important way to research the characteristics of heterojunction. With the help of the measuring C-V and I-V character, we can easily obtain the evidence that interface impurity state and defects in ZnO ∶Al/p-Si interface can have largely influence on electricity property of the heterojunction. We also found it was very useful to reduce the interface state (using) annealing procedure. It was clearly to see that the sample annealed in 800 ℃ had the larger illuminant efficiency.Whether annealed or not, the sample grown by RF sputtering technique can form an abrupt heterojunction, but the character of potential was not the same. As a large number of deep level and surface state level were in interfaces, the C-V curve of sample which was not annealed was aberrance and the I-V curve was exponential with reversing bias voltage. In condition of annealing under 800 ℃, we can observe the influence of interface state was eliminated, and improved rectifying characteristic of heterojunction.

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Density Functional Theory-Based Study of Ag/ZnO Schottky Diode

Influence of Illumination Intensity on the Electrical Characteristics and Photoresponsivity of the Ag/ZnO Schottky Diodes

Preparation of ZnO Thin Film Schottky Barrier Diode

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

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Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Contact Characteristics of ZnO :Al/p-Si