Through-silicon-via technology for 3D integration
john o dukovic,sesh ramaswami,sharma v pamarthy,r c yalamanchili,nandini rajagopalan,kedar sapre,zhitao cao,thomas l ritzdorf,yan wang,b eaton,ran ding,mario ivan martinez hernandez,mehul naik,dali mao,jenchou tseng,dawei cui,greg mori,p fulmer,khalid sirajuddin,jianping hua,s xia,d erickson,rozalia beica,e young,p kusler,r kulzer,shiany oemardani,hongjun dai,x xu,maxine m okazaki,kfir dotan,c yu,c lazik,jimmy tran,limin luo
DOI: https://doi.org/10.1109/IMW.2010.5488399
2010-01-01
Abstract:Major efforts are currently underway throughout the IC industry to develop the capability to integrate device chips by stacking them vertically and using through-silicon vias (TSVs). The resulting interconnect density, bandwidth, and compactness achievable by TSV technology exceed what is currently possible by other packaging approaches. Market-driven applications of TSV involving memory include multi-chip high-performance DRAM, integration of memory and logic functions for enhanced video on handheld devices, and stacked NAND flash for solid-state drives. High-volume commercial implementation of 3D TSV is imminent but faced by special challenges of design, fabrication, bonding, test, reliability, know-good die, standards, logistics, and overall cost. The main focus of this paper is the unit-process and process-integration technology required for TSV fabrication at the wafer level: deep silicon etching, dielectric via isolation, metallization, metal fill, and chemical-mechanical polishing.