The law of ultrasonic energy conversion in thermosonic flip chip bonding interfaces

Li Junhui,Wang Ruishan,He Hu,Wang Fuliang,Han Lei,Zhong Jue
DOI: https://doi.org/10.1016/j.mee.2009.01.058
IF: 2.3
2009-01-01
Microelectronic Engineering
Abstract:In this paper, the vibration characteristics during the flip chip (FC) bonding process were observed by using a laser Doppler vibrometer (LDV), and the atom diffusion features in vertical section of the FC bonding interfaces were inspected by using a high resolution transmission electron microscope (HRTEM). Results show that the vibration velocity of a die was about 500mm/s during the traditional FC bonding process, and that of a substrate was only about 180mm/s. It led to the difference of atom diffusion in the FC interfaces. For the given variables, the thickness of atom diffusion at an up-interface (i.e. Au/Al interface) of the FC bonding was about 500nm where was an inter-metallic compound (i.e. AuAl"2), and that of atom diffusion at a down-interface (i.e. Au/Ag interface) was about 200nm. Furthermore, the law of ultrasonic energy conversion was found that the ratio of the up-interface to the down-interface in the FC bonding was statistically about 2.21:1. According to this principle, different bonding processes are suggested to improve the performance of two interfaces. The experimental evaluation confirms the effectiveness of the suggested processes on minimizing the inter-metallic compound layer and equilibrating the thickness of atom diffusion at two interfaces.
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