Abstract:The intrinsic Fresnel reflection of Si surface, which causes more than 30% of the incident light to be reflected back from the surface, seriously influences the photoelectric conversion efficiency of Si-based semiconductor photoelectric device, such as solar cell and infrared detector. Recently, how to find a simple and efficient method, which is also suitable for mass production, aiming to suppress the undesired reflectivity and therefore improving the efficiency of the device, has become a research focus. In this work, we successfully convert a 2D nanopillar array structure into the Si surface via the nanoimprint lithography. The nanopillar has a flat surface and a paraboloid-like side wall profile. The period and the height of the hexagonal array structure are 530 nm and 240 nm, respectively. The cut-paraboloid nanopillar structure generates a relatively smooth gradient of the refractive index in the optical interface, which plays a key role in suppressing the Fresnel reflection in a wide range of wavelength. The reflectivity of the nanopillar arrayed Si surface is tested in a wavelength range from 400 to 2500 nm at an incident angle of 8 during the measurement. Compared with the unstructured Si, the structured Si has a reflectivity that significantly decreases in the test area: in a wavelength range from 400 to 1200 nm, and the reflectivity of the silicon surface is less than 10%. Specifically, the reflectivity is almost zero at a wavelength of about 1360 nm. The results are confirmed with the effective medium and rigorous coupled-wave theory.

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Optical Device Based on a Nanopillar Array by the Pattern Transfer of an Anodic Aluminum Oxide Membrane

Fabrication and optical properties of silicon nanopillar arrays with controllable surface structures

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Broadband anti-reflection coating for Si solar cell applications based on periodic Si nanopillar dimer arrays & Si 3 N 4 layer

Broadband Antireflection Property of Silicon Nanocone Arrays with Porous Sidewalls Fabricated by Ag-catalyzed Etching

Antireflection Subwavelength Structures Based on Silicon Nanowires Arrays Fabricated by Metal-Assisted Chemical Etching

The Fabrication of the Antireflective Periodic Nano-Arrary Structure on Si Surface Using Nanoimprint Lithography and the Study on Its Properties

Biomimetic antireflective Si nanopillar arrays.

Design Optimization and Antireflection of Silicon Nanowire Arrays Fabricated by Au-assisted Chemical Etching

Periodic Si nanopillar arrays by anodic aluminum oxide template and catalytic etching for broadband and omnidirectional light harvesting

Study on Silicon Nanopillars with Ultralow Broadband Reflectivity Via Maskless Reactive Ion Etching at Room Temperature

High Anti-Reflection Large-Scale Cup-Shaped Nano-Pillar Arrays via Thin Film Anodic Aluminum Oxide Replication

Periodic Silicon Nanocones Arrays with Controllable Dimensions Prepared by Two-Step Etching Using Nanosphere Lithography and NH4OH/H2O2 Solution

Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

Broadband Optical Absorption by Tunable Mie Resonances in Silicon Nanocone Arrays

Fabrication of antireflective silicon nanowires array

Highly-ordered Silicon Inverted Nanocone Arrays with Broadband Light Antireflectance.

Manipulations of Optical Resonances from Visible to Near-IR Based on a-Si Elliptic Nanopillar Arrays

Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures

Broadband Antireflection Of Silicon Nanorod Arrays Prepared By Plasma Enhanced Chemical Vapor Deposition