Hydrogen induced positive charge in Hf-based dielectrics

C. Z. Zhao,J. F. Zhang,M. B. Zahid,E. Efthymiou,Y. Lu,S. Hall,A. R. Peaker,G. Groeseneken,L. Pantisano,R. Degraeve,S. De Gendt,M. Heyns
DOI: https://doi.org/10.1016/j.mee.2007.04.096
IF: 2.3
2007-01-01
Microelectronic Engineering
Abstract:This work investigates the anneal-induced positive charge in Hf-based dielectrics. It is found that anneal in forming gas produces substantially more positive charge than that in N"2 at 500 ^oC, indicating that hydrogen is a reactant for the positive charging. Positive charging is thermally accelerated and can occur in both HfO"2 and Hf-silicates. Nitridation of either interfacial layer or whole dielectric stack enhances the positive charging significantly. These positive charges have a large sample-to-sample variation and are stable. For the first time, both mobile and fixed charges are simultaneously observed for Hf-stacks.
What problem does this paper attempt to address?