Abstract:Understanding the interaction of hydrogen (H) with defects has been recognized as a central aspect in hydrogen-induced damages in metals. In this work, the role of coherent and semi-coherent interfaces between W and ZrC on H trapping, desorption and clustering in nanostructured W alloys was investigated by density functional theory calculations. It is found that, the trapping ability of pure interface is comparable with the intrinsic defects (grain boundary, dislocations) in bulk W, with segregation energies of H ranging from -1.37 to -0.98 eV. While the interfaces with W/C vacancy show stronger trapping capabilities, especially for the semi-coherent interfaces. This leads to low peak temperatures of 390-567 K for H desorption from the pure interfaces and high peak temperatures of 470-836 K from the vacancycontaining interfaces. As the number of H atoms increases, they preferentially segregate to the interfacial W vacancy and divacancy, and then stay at the interface and interface-like zones discretely until the adsorption rate reaches 3/8. The strong traps of vacancy-containing phase interfaces could effectively absorb H from the screw dislocation cores and bulk vacancies in W, hence preventing H-induced damage. This work advances atomic-level understanding of the role of phase interfaces in H trapping and clustering, not only offering direct explanations for experimental H desorption observations, but also pointing to a feasible route towards interface engineering against H-induced damage in structural metals. (c) 2022 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Relation between hole traps and non-reactive hydrogen-induced positive charges

Relation Between Hole Traps and Hydrogenous Species in Silicon Dioxides

Effects of Hydrogen on Positive Charges in Gate Oxides

A review of positive charge formation in gate oxides

Hole traps in silicon dioxides. Part I. Properties

Hole-traps in Silicon Dioxides. Part II. Generation Mechanism

Hydrogen Induced Positive Charge Generation in Gate Oxides

Theoretical investigation on hydrogen-related oxide traps in HfO2 gate dielectrics: An ab-initio study

Hole Trap Generation in Gate Dielectric During Substrate Hole Injection

Hydrogen Induced and Plasma Charging Enhanced Positive Charge Generation in Gate Oxides

Hydrogen induced positive charge in Hf-based dielectrics

Interface State Generation After Hole Injection

A Unified Mechanism for Hydrogen Trapping at Metal Vacancies

Towards Understanding Hole Traps and NBTI of Ge/GeO2/Al2O3 Structure

Trapping Abelian Anyons in Fractional Quantum Hall Droplets

On the factors enhancing hydrogen trapping in spherical cavities in metals

Phase-Field Insights into Hydrogen Trapping by Secondary Phases in Alloys

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Atomistic insight into hydrogen trapping at MC/BCC-Fe phase boundaries: The role of local atomic environment

Impact of Gate Materials on Positive Charge Formation in HfO2∕SiO2 Stacks

Hydrogen trapping, desorption and clustering in heterophase interfaces of W-ZrC alloy