Abstract:Positive charge formation in gate oxides is a main source for the instability of the state-of-the-art metal-oxide-semiconductor device. Despite past efforts, the relation between hydrogenous species and positive charges is not fully understood. In this work, the effects of hydrogen on positive charges will be investigated at both elevated temperature (e.g., 400°C) and room temperature. At 400°C, it is found that hydrogen can convert some defects into hole traps. Three different types of positive charges have been reported recently. They are as-grown hole traps, anti-neutralization positive charges (ANPC), and cyclic positive charges (CPC). Although an exposure to hydrogen at 400°C neutralizes all three, impacts of hydrogen on these three types of defects are markedly different. After the hydrogen-induced neutralization, the defect responsible for ANPC is fully recovered and is the same as that in a fresh device. In contrast, the defect for CPC is not fully recovered and can be reactivated easily by stresses. The as-grown hole trap can be converted to ANPC through hydrogenation. At room temperature, it will be shown that there are two parallel processes for forming positive charges. One involves hydrogen and the other is through hole trapping. The relative importance of these two depends on the relative density of hydrogen against that of holes.

Impact of Gate Materials on Positive Charge Formation in HfO2∕SiO2 Stacks

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Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Process-Induced Positive Charges in Hf-Based Gate Stacks

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Effects of Hydrogen on Positive Charges in Gate Oxides

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A Study of Metal Gates on HfO2 Using Si Nanowire Field Effect Transistors As Platform

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

A review of positive charge formation in gate oxides

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Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric

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Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Electrical Performance Improvement In Sio2/Hfsio High-K Gate Stack For Advanced Low Power Device Application

Degradation of polycrystalline HfO<sub>2</sub>-based gate dielectrics under nanoscale electrical stress