Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Hydrogen Incorporation Dependence on the Thermal Growth Route in Dielectric/sic Structures

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Hydrogen induced positive charge in Hf-based dielectrics

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

H-Induced Platelet And Crack Formation In Hydrogenated Epitaxial Si/Si0.98b0.02/Si Structures

The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Consequences of No Thermal Treatments in the Properties of Dielectric Films/Sic Structures

Hydrogen concentration profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Investigation of hydrogen incorporations in bulk infinite-layer nickelates

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6h Sic

Distribution and electronic structure of interstitial hydrogen atoms in β-SiC: a First-Principles study

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO$_2$ interfaces

Hydrogen interaction with Pd/SiO2/Si rectifying junction

Hydrogen Resistance Property of Surface N~+ Implanting SiC Coating